 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TIP47/48/49/50 TIP47/48/49/50 High Voltage and Switching Applications * High Sustaining Voltage : VCEO(sus) = 250 - 400V * 1A Rated Collector Current NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP47 : TIP48 : TIP49 : TIP50 Collector-Emitter Voltage : TIP47 : TIP48 : TIP49 : TIP50 1 TO-220 2.Collector 3.Emitter Units V V V V V V V V V A A A W W C C 1.Base Value 350 400 450 500 250 300 350 400 5 1 2 0.6 40 2 150 - 65 ~ 150 VCEO VEBO IC ICP IB PC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature Electrical Characteristics TC=25C unless otherwise noted Symbol VCEX(sus) Parameter Collector-Emitter Sustaining Voltage : TIP47 : TIP48 : TIP49 : TIP50 Collector Cut-off Current : TIP47 : TIP48 : TIP49 : TIP50 Collector Cut-off Current : TIP47 : TIP48 : TIP49 : TIP50 Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time Test Condition IC = 30mA, IB = 0 Min. 250 300 350 400 1 1 1 1 1 1 1 1 1 30 10 150 1 1.5 10 0.5 3 0.3 V V MHz s s s Max. Units V V V V mA mA mA mA mA mA mA mA mA ICEO VCE = 150V, IB = 0 VCE = 200V, IB = 0 VCE = 250V, IB = 0 VCE = 300V, IB = 0 VCE = 350V, VBE = 0 VCE = 400V, VBE = 0 VCE = 450V, VBE = 0 VCE = 500V, VBE = 0 VEB = 5V, IC = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A IC = 1A, IB = 0.2A VCE = 10V, IC = 1A VCE =10V, IC = 0.2A VCC = 400V 5IB1 = -2.5IB2 = IC = 6A RL = 66.7 ICEX IEBO hFE VCE(sat) VBE(sat) fT tON tSTG tF * Pulse Test: PW300s, duty Cycle2% Pulse (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TIP47/48/49/50 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 V CE = 10V IC = 5 IB hFE, DC CURRENT GAIN 100 1 VBE(sat) V CE(sat) 0.1 10 1 0.01 0.1 1 4 0.01 0.01 0.1 1 4 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 10 50 IC[A], COLLECTOR CURRENT 1 PC[W], POWER DISSIPATION 1000 40 10 0 S 50 0S s 1m C D. 30 20 0.1 TIP47 TIP48 TIP49 TIP50 0.01 1 10 100 10 0 0 25 50 o 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 3. Safe Operating Area Figure 4. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TIP47/48/49/50 Package Demensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
Price & Availability of TIP50
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |